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Thermal-induced domain wall motion of tip-inverted micro/nanodomains in near-stoichiometric LiNbO3 crystals

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5 Author(s)
Liu, X.Y. ; Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195-2120, USA ; Kitamura, K. ; Liu, Y.M. ; Ohuchi, F.S.
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Thermal-induced domain wall motion of tip-inverted micro/nanodomains in near-stoichiometric LiNbO3 single crystals was investigated using piezoresponse force microscopy (PFM). The domain wall motion was observed in PFM phase and amplitude images at room temperature after the sample was subjected to a thermal process at a heating temperature higher than 100 °C. In hexagonal domains with only y walls, predetermined nucleation with layer-by-layer growth is the main mechanism for the domain wall motion. In the domains composed of both x walls and y walls, the x walls are more mobile than the y walls, and the domain wall motion starts from the random nucleation of steps along the x walls that finally grow into y walls. The domain wall motion in the near-stoichiometric LiNbO3 crystal is attributed to the energy-preferable domain wall orientation, the pyroelectric effect, and the screening charge variation caused by the thermal process.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 5 )