Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3623764
ZnO nanostructures are promising candidates for the development of novel electronic devices due to their unique electrical and optical properties. Here, we present a complementary electrical characterization of individual upright standing and lying ZnO nanorods using conductive atomic force microscopy (C-AFM). Initially, the electrical properties of the arrays of upright standing ZnO NRs were characterized using two-dimensional current maps. The current maps were recorded simultaneously with the topography acquired by contact mode AFM. Further, C-AFM was utilized to determine the local current-voltage (I-V) characteristics of the top and side facets of individual upright standing NRs. Current-voltage characterization revealed a characteristic similar to that of a Schottky diode. Detailed discussion of the electrical properties is based on local I-V curves, as well as on the 2D current maps recorded from specific areas.