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Electrical properties of ZnO nanorods studied by conductive atomic force microscopy

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12 Author(s)
Beinik, I. ; Institute of Physics, Montanuniversitaet Leoben, Franz-Josef Str. 18, A-8700 Leoben, Franz-Josef Str. 18, A-8700 Leoben, Austria ; Kratzer, M. ; Wachauer, A. ; Wang, L.
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ZnO nanostructures are promising candidates for the development of novel electronic devices due to their unique electrical and optical properties. Here, we present a complementary electrical characterization of individual upright standing and lying ZnO nanorods using conductive atomic force microscopy (C-AFM). Initially, the electrical properties of the arrays of upright standing ZnO NRs were characterized using two-dimensional current maps. The current maps were recorded simultaneously with the topography acquired by contact mode AFM. Further, C-AFM was utilized to determine the local current-voltage (I-V) characteristics of the top and side facets of individual upright standing NRs. Current-voltage characterization revealed a characteristic similar to that of a Schottky diode. Detailed discussion of the electrical properties is based on local I-V curves, as well as on the 2D current maps recorded from specific areas.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 5 )