By Topic

Impact of In situ vacuum anneal and SiH4 treatment on electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Liu, Xinke ; National University of Singapore (NUS), Singapore 117576, Singapore ; Low, Edwin Kim Fong ; Pan, Jisheng ; Liu, Wei
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3633104 

The effect of in situ vacuum anneal (VA) and silane (SiH4) treatment on the electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors was investigated. Native Ga-O bonds on the AlGaN surface can be completely removed by this in situ passivation technique, which was confirmed by x-ray photoelectron spectroscopy. In situ VA and SiH4 passivation also reduced the device gate leakage current. This is attributed to the suppression of trap-assisted tunneling current through the HfAlO gate dielectric. Saturation drain current for devices with in situ VA and SiH4 passivation was also improved, which is due to increased two-dimensional electron gas density. In addition, devices with in situ VA and SiH4 passivation achieved an Ion/Ioff ratio of around 106 and a subthreshold swing of less than 100 mV/decade.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 9 )