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Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate

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5 Author(s)
Matsuo, S. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Tateno, K. ; Nakahara, T. ; Tsuda, H.
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The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1 mA and the maximum output power was 2.45 mW for a 15 μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit

Published in:

Electronics Letters  (Volume:33 ,  Issue: 13 )