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A 60 GHz Sub-Harmonic Resistive FET Mixer Using 0.13 \mu{\rm m} CMOS Technology

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3 Author(s)
Lin, Shih-Kai ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Jing-Lin Kuo ; Huei Wang

A 56 to 66 GHz sub-harmonic resistive mixer using 0.13 μm CMOS technology is presented in this letter. This mixer exhibits a flat conversion loss of about -12 and -13 dB and good isolations between ports from 56 to 66 GHz for both down and up-conversion with a lowest LO power of 0 and -1 dBm. The 2LO-RF isolation is more than 27 dB even if IF input power exceeds 4 dBm, which results from the mechanism of connecting drain and body of the device. Besides, this mixer has a relatively high input P1dB and a 3 GHz IF bandwidth in each band defined in IEEE 802.15.3c standard.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 10 )