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Browse Journals & Magazines > Microwave and Wireless Compon ...> Volume:21 Issue:10 Help

A 60 GHz Sub-Harmonic Resistive FET Mixer Using 0.13 \mu{\rm m} CMOS Technology

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3 Author(s)
Lin, Shih-Kai ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Jing-Lin Kuo ; Huei Wang

A 56 to 66 GHz sub-harmonic resistive mixer using 0.13 μm CMOS technology is presented in this letter. This mixer exhibits a flat conversion loss of about -12 and -13 dB and good isolations between ports from 56 to 66 GHz for both down and up-conversion with a lowest LO power of 0 and -1 dBm. The 2LO-RF isolation is more than 27 dB even if IF input power exceeds 4 dBm, which results from the mechanism of connecting drain and body of the device. Besides, this mixer has a relatively high input P1dB and a 3 GHz IF bandwidth in each band defined in IEEE 802.15.3c standard.

Published in:
Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 10 )

Date of Publication: Oct. 2011

Page(s):
562 - 564
ISSN :
1531-1309
INSPEC Accession Number:
12273857
Digital Object Identifier :
10.1109/LMWC.2011.2165701
Product Type:
Journals & Magazines
Date of Publication :
05 September 2011
Date of Current Version :
06 October 2011
Issue Date :
Oct. 2011
Sponsored by :
IEEE Microwave Theory and Techniques Society

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