By Topic

An Improved Si Tunnel Field Effect Transistor With a Buried Strained \hbox {Si}_{1-x}\hbox {Ge}_{x} Source

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zhao, Q.T. ; Peter Grunberg Inst. 9 (PGI 9-IT), Forschungszentrum Julich, Julich, Germany ; Hartmann, J.-M. ; Mantl, S.

We report on experimental and simulated results of tunneling field-effect transistors (TFETs) with a Si channel and a strained Si1-xGex source. The fabricated TFET with a tensile strained Si channel shows comparably large on-currents and a subthreshold slope of 80 mV/dec at 300 K for a drain current range of three orders of magnitude. A novel TFET structure is proposed to enhance the on-currents by using a buried Si1-xGex source. The overlap between the top thin Si channel and the buried SiGe source increases the tunneling area. Simulations indicate that this structure significantly improves the performance.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 11 )