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Three-dimensional k · p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities

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6 Author(s)
Pons, Nicolas ; IM2NP, UMR CNRS 6242, Université de Provence, Bât. IRPHE, Marseille 13384, France ; Cavassilas, Nicolas ; Raymond, Laurent ; Michelini, Fabienne
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We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This self-consistent model expresses a six-band k · p Hamiltonian within the non-equilibrium Green’s function formalism. Transport properties are analyzed with and without the presence of ionized impurities in the channel. We observe that inter-subband coupling generates a rich structure of peaks in the transmission coefficients even in the intrinsic situation. A single donor leads to a current decrease whereas its acceptor counterpart induces complicated resonant and anti-resonant features. Unlike n-type devices, our conclusions pinpoint that the p-type nanowire transistors exhibit intricate transmission variations that can potentially generate larger variability and whose modeling requires a multi-band based simulator.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 8 )

Date of Publication:

Aug 2011

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