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Formation of complexes of quantum dots InAs and nanoclusters as in matrix GaAs by molecular beam epitaxy

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7 Author(s)
Alexander A. Zaichenko ; A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia ; B. R. Semyagin ; V. V. Preobrazhenskii ; M. A. Putyato
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Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The In As quantum dots are formed by the Stranski-Krastanov mechanism, and the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of stacking faults during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the stacking faults bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.

Published in:

2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings

Date of Conference:

June 30 2011-July 4 2011