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The influence of low-temperature annealing on properties of heterostructures p-HgCdTe grown by molecular-beam epitaxy

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3 Author(s)
Kombarov, D.V. ; Siberian State Geodetic Acad., Novosibirsk, Russia ; Protasov, D.Y. ; Kostyuchenko, V.Y.

In heterostructures p-HgCdTe changes of density and mobility of major carriers, mobility and lifetime of minor carriers were investigated after some contacts with water and annealing at 80°C. The obtained dependencies for samples from various heterostructures have a strong difference. For some heterostructures the density of major carriers and lifetime of minor carriers sharply increased after such treatments.

Published in:

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Date of Conference:

June 30 2011-July 4 2011

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