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Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

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5 Author(s)
Xin Sun ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; Victor Moroz ; Nattapol Damrongplasit ; Changhwan Shin
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The impact of systematic and random variations on transistor performance is investigated for the trigate bulk MOSFET, the planar ground-plane bulk MOSFET, and SOI FinFET. The results indicate that the trigate bulk MOSFET design is least sensitive to process-induced variations and offers the best nominal performance, as compared with the planar ground-plane bulk MOSFET and SOI FinFET.

Published in:

IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 10 )