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The electronic properties of graphene nanoribbons (GNRs) in the presence of line-edge roughness scattering are studied. The mobility, conductivity, mean free path, and localization length of carriers are analytically derived using an effective mass model for the band structure. This model provides a deep insight into the operation of armchair GNR devices in the presence of line-edge roughness. The effects of geometrical and roughness parameters on the electronic properties of GNRs are estimated assuming a diffusive transport regime. However, in the presence of disorder, localization of carriers can occur, which can significantly reduce the conductance of the device. The effect of localization on the conductance of rough nanoribbons and its dependences on the geometrical and roughness parameters are analytically studied. Since this regime is not suitable for the operation of electronic devices, one can employ these models to obtain critical geometrical parameters to suppress the localization of carriers in GNR devices.