By Topic

Effect of \hbox {Ge}_{2}\hbox {Sb}_{2}\hbox {Te}_{5} Thermal Barrier on Reset Operations in Filament-Type Resistive Memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Wootae Lee ; Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea ; Siddik, M. ; Seungjae Jung ; Jubong Park
more authors

We have investigated the effect of a Ge2Sb2Te5 (GST) thermal barrier on the reset operations in TiN/Cu/SiC/Pt devices. When the GST film was introduced as a thermal barrier, the device showed a lower reset voltage and a lower reset current than a device without the GST layer. In particular, the reset speed of the device with the GST layer was significantly faster at room temperature compared to the device without the GST layer. We attribute the improved resistive switching to the GST thermal barrier, which induces thermally assisted electrochemical reduction of the Cu filament.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 11 )