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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:32 Issue:11 Help

Effect of \hbox {Ge}_{2}\hbox {Sb}_{2}\hbox {Te}_{5} Thermal Barrier on Reset Operations in Filament-Type Resistive Memory

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10 Author(s)
Wootae Lee ; Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea ; Siddik, M. ; Seungjae Jung ; Jubong Park
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We have investigated the effect of a Ge2Sb2Te5 (GST) thermal barrier on the reset operations in TiN/Cu/SiC/Pt devices. When the GST film was introduced as a thermal barrier, the device showed a lower reset voltage and a lower reset current than a device without the GST layer. In particular, the reset speed of the device with the GST layer was significantly faster at room temperature compared to the device without the GST layer. We attribute the improved resistive switching to the GST thermal barrier, which induces thermally assisted electrochemical reduction of the Cu filament.

Published in:
Electron Device Letters, IEEE  (Volume:32 ,  Issue: 11 )

Date of Publication: Nov. 2011

Page(s):
1573 - 1575
ISSN :
0741-3106
INSPEC Accession Number:
12315660
Digital Object Identifier :
10.1109/LED.2011.2163614
Product Type:
Journals & Magazines
Date of Publication :
29 August 2011
Date of Current Version :
24 October 2011
Issue Date :
Nov. 2011
Sponsored by :
IEEE Electron Devices Society

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