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Low-voltage electric-double-layer (EDL) thin-fllm transistors (TFTs) have been fabricated on paper substrates at room temperature. The devices operated in depletion mode, and the resistivity of the Indium-Tin-Oxide (ITO) channel layer is measured to be 24 Ω · cm. An SiO2 film deposited by plasma enhanced chemical-vapor deposition method is used as the buffer layer to improve the smoothness of the paper substrate. TFTs on the SiO2-covered paper substrates show a saturation filed-effect mobility of 14.6 cm2V-1s-1, a subthreshold swing of 100 mV/dec, and a drain-current on/off ratio of 1.5 × 106, which are much better than that of the devices on bare paper substrates. Such EDL TFTs on paper substrates with an SiO2 buffer layer have potential application in portable sensors.