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Low-Voltage Electric-Double-Layer TFTs on  \hbox {SiO}_{2} -Covered Paper Substrates

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5 Author(s)
Dou, Wei ; Key Lab. for Micro-Nano Optoelectron. Devices of the Minist. of Educ., Hunan Univ., Changsha, China ; Jiang, Jie ; Sun, Jia ; Zhou, Bin
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Low-voltage electric-double-layer (EDL) thin-fllm transistors (TFTs) have been fabricated on paper substrates at room temperature. The devices operated in depletion mode, and the resistivity of the Indium-Tin-Oxide (ITO) channel layer is measured to be 24 Ω · cm. An SiO2 film deposited by plasma enhanced chemical-vapor deposition method is used as the buffer layer to improve the smoothness of the paper substrate. TFTs on the SiO2-covered paper substrates show a saturation filed-effect mobility of 14.6 cm2V-1s-1, a subthreshold swing of 100 mV/dec, and a drain-current on/off ratio of 1.5 × 106, which are much better than that of the devices on bare paper substrates. Such EDL TFTs on paper substrates with an SiO2 buffer layer have potential application in portable sensors.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 11 )