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Effect of carrier capture by deep levels on lateral photoconductivity of InGaAs/GaAs quantum dot structures

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3 Author(s)
Vakulenko, O.V. ; Faculty of Physics, Kyjiv Taras Shevchenko National University, 64, Volodymyrsjka Str., Kyjiv 01601, Ukraine ; Golovynskyi, S.L. ; Kondratenko, S.V.

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Having used thermally stimulated conductivity (TSC) technique, we identified deep electron traps that produce strong effects on charge carrier transport and photoconductivity in InGaAs/GaAs quantum dot (QD) structures. The values of deep levels below the conduction band of GaAs at 0.16, 0.22, and 0.35 eV are obtained from the analysis of the shapes of TSC curves after the excitation with the quanta energy hv = 0.9, 1.2, and 1.6 eV. The level 0.16 eV in depth is an effective electron trap that provides crossing of lateral conductivity with a high-resistance mode and, therefore, causes a high photocurrent sensitivity of about 3 A/W at 77 K with excitation by interband transitions in QDs. We determined the charge density of electrons captured by the (Ec – 0.16 eV) level to be 2 × 10-6 C/cm2 at 77 K that induces electric field ∼ 105 V/cm in a vicinity of QDs. The state at Ec – 0.22 eV is shown to be related to the recombination center that can hold non-equilibrium holes over a long time under the condition that the non-equilibrium holes are localized by the quantum states of QDs. In the course of long-term electron storage in a vicinity of QDs, an electron trapped at the (Ec – 0.16) eV level can be recaptured by a deeper spatially remote (Ec – 0.22 eV) level that allows the TSC peak observation at 106 K.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 4 )

Date of Publication:

Aug 2011

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