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THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

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6 Author(s)
William Deal ; Northrop Grumman Corporation, Redondo Beach, CA, USA ; X. B. Mei ; Kevin M. K. H. Leong ; Vesna Radisic
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In this paper, background describing THz monolithic integrated circuits using InP HEMT is presented. This three-terminal transistor technology has been used to realize amplifiers, mixers, and multipliers operating at 670 GHz. Transistor and processing technology, packaging technology, and circuit results at 670 GHz are described. The paper concludes with initial results from a 670-GHz InP HEMT receiver and trends for InP HEMT components.

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IEEE Transactions on Terahertz Science and Technology  (Volume:1 ,  Issue: 1 )