Cart (Loading....) | Create Account
Close category search window
 

Homogeneity, activation effects and current limits of structured CNT column cathodes on Si substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Navitski, A. ; FB C Phys. Dept., Univ. of Wuppertal, Wuppertal, Germany ; Serbun, P. ; Muller, G. ; Joshi, R.K.
more authors

Regular arrays of entangled carbon nanotube (CNT) columns were grown on p-Si substrates with bimetallic (aluminum and patterned iron) catalyst by water assisted chemical vapor deposition based on a pyrolysis of ethylene. Rounded CNT columns of about 20 μm diameter and 5 μm height in an asymmetric triangular array of 256 and 270 μm pitch were obtained. The field emission (FE) maps yielded high efficiency and good alignment of the CNT emitters. Local FE investigations of single columns revealed initial onset field of ~ 11 V/μm for 1 nA. The FE current was rather stable (± 10 %), first FN-like (<; 0.1 μA) but then saturated above 20 V/μm to 1-2 μA. Above 40-60 V/μm, however, irreversible current jumps up to 10-40 μA occurred reproducibly for all emitters. This strong activation effect was often combined with a visible light emission from hot spots at the top of the columns. Finally stable FN-like current-voltage curves with onset field of ~ 30 V/μm and maximum current of ~40 μA were obtained. This strange FE behavior of CNT cathodes is considered to be caused by the creation of conducting channels into the SiO2 layer and will be explained by the band structure.

Published in:

Vacuum Nanoelectronics Conference (IVNC), 2011 24th International

Date of Conference:

18-22 July 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.