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1.55 μm InGaAsP/InP phase-locked diode laser arrays of high coherent power

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3 Author(s)
Bhattacharya, A. ; Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA ; Mawst, L.J. ; Botez, D.

We have obtained 2.5 W peak-pulsed power in a 2.6° wide beam (6.4×diffraction-limit), with 1.2 W in the central lobe, from 40-element, 250 μm aperture, 1.55 μm antiguided laser arrays. The InP-based devices have a compressively-strained InGaAsP double-quantum-well active region and are fabricated by creating a near-resonant antiguided array via a two-step self-aligned MOCVD growth. The width of the central lobe remains constant from 4 to 15×threshold

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997