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MOCVD growth of heavily p-type doped InGaAs using bismethylcyclopentadienyl-beryllium

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7 Author(s)
Suzuki, D. ; Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan ; Kimura, T. ; Takiguchi, T. ; Takemi, M.
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Beryllium (Be) has been investigated as p-type dopant for InGaAs layers grown using bismethylcyclopentadienyl-beryllium ((MeCp)2 Be) by low-pressure metalorganic chemical vapor deposition. It is found that hole concentration is in proportion to the (MeCp)2Be flow rate, which results in excellent doping controllability. Moreover, the doping efficiency of (MeCp)2Be is one order of magnitude higher than that of diethylzinc (DEZn). InGaAs increases with increasing growth temperature in the temperature range from 570 to 625°C. Heavily Be-doped InGaAs layers with specular surface morphology have been attained with a hole concentration in excess of 1019 cm-3 by optimization of growth condition. (MeCp)2Be is promising precursor as p-type dopant source for optoelectronic devices

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997

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