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Optimization of InGaAs/InAlAs/InP HEMT gate recess process for high frequency and high power applications

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12 Author(s)
Chen, Y.C. ; Electron. Space & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Lai, R. ; Wang, H. ; Yen, H.C.
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We have optimized the gate recess etch process for our W-band high power 0.15 μm gate length InGaAs/InAlAs/InP HEMTs. A 640 μm single-stage MMIC amplifier built on this device demonstrated an output power of 130 mW with 13% power added efficiency at 94 GHz. This results represent the best output power fixture data to date measured from a single InP-based HEMT MMIC at this frequency

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997