Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

InP based materials for long wavelength optoelectronics grown in multiwafer planetary reactors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Beccard, R. ; AIXTRON GmbH, Aachen, Germany ; Schmitz, D. ; Deufel, M. ; Protzmann, H.
more authors

We present an investigation of the growth of InP based materials in a Multiwafer Planetary Reactor (R). A reactor suited for the simultaneous growth of 15×2", 8×3" or 5×4" wafers was used to grow InP, GaInAs and various GaInAsP compositions. As predicted by the theory of the Planetary Reactor (R) principle, excellent uniformities of all layer properties were found. Without any tuning of process parameters, thickness variations of ±1% or better were obtained. The compositional uniformity was also very good. This was confirmed by X-ray diffraction and PL mapping. Emission wavelength uniformities were in the 1 nm range. p- and n-type doping was also investigated. Sheet resistivity measurements on doped samples reveal uniformities around 1%.

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997