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Optical and structural characterization of InAsP/InGaP strain compensated multiple quantum wells grown by GSMBE

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6 Author(s)
H. C. Kuo ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; S. Thomas ; A. P. Curtis ; C. H. Lin
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High-quality InAsP/InP (3ML)/InGaP SC-MQWs with zero net strain up to 40 periods were grown by GSMBE. Compared with uncompensated InAsP/InP strained MQWs and InAsP/lnGaP SC-MQWs without the InP insertion layers, much sharper and symmetric satellite peaks in double-crystal X-ray diffraction and excellent photoluminescence was obtained from SC-MQWs with the InP insertion layers

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997