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Bulk ternary indium phosphide arsenide, InP1-xAsx : growth and characterization

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1 Author(s)
W. A. Bonner ; Crystallod Inc., Somerville, NJ, USA

In(P,As) bulk ternary single crystal growth has been demonstrated using the liquid encapsulated Czochralski (LEC) technique with both InP and ternary In(P,As) seeds. Arsenic concentrations to nominally 10% have been achieved. While problems related to cracking and compositional uniformity exist, the single crystals are capable of producing wafers and bulk material for characterization and preliminary device studies. Optical and electrical measurements are reported

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997