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Novel InAlAs/InGaAs heterojunction FETs with modulated indium composition channel and AlAs/InAs superlattice barrier layer

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8 Author(s)
Onda, K. ; Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan ; Fujihara, A. ; Wakejima, A. ; Mizuki, E.
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Novel InAlAs/InGaAs heterojunction FETs (HJFETs) with modulated indium composition channels, named CCMTs (Channel Composition Modulated Transistors), have been successfully fabricated, in which an InAs channel is sandwiched by In0.53Ga0.47As/In0.8 Ga0.2As sub-channels. The channel structure is designed to improve electron transport and electron confinement by increase effective indium content in consideration of channel electron distribution. The fabricated devices also employ an AlAs/InAs superlattice as a barrier layer against impurity contamination for high thermal stability. A 0.2 μm T-shaped gate device exhibits gm of 1370 mS/mm, and Ft of 180 GHz at a low drain bias of 1.0 V. In high temperature and DC life test conducted at more than 230°C, the devices exhibited less than 3% degradation after 100 hrs, which shows the developed CCMTs with AlAs/InAs superlattice insertion technology can offer high-performance and highly-reliable InP-based HJFETs for various microwave and millimeter-wave applications

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997