Molecular beam epitaxial growth of quantum wire heterostructures using (GaP)/sub x//(InAs)/sub y/ short period superlattices on InP

Semiconductor quantum wires (QWR) are of great interest for their theoretically predicted advantages over the current quantum well (QW) technology. We report the application of the strain-induced lateral-layer ordering (SILO) process to a novel material system, spontaneously creating GaInAsP QWRs in situ on InP. Through molecular beam epitaxy, combinations of short-period superlattice (SPS) constituents are deposited on the growth surface.