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Molecular beam epitaxial growth of quantum wire heterostructures using (GaP)x/(InAs)y short period superlattices on InP

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4 Author(s)
Moy, A.M. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Chou, L.J. ; Hsieh, K.C. ; Cheng, K.Y.

Semiconductor quantum wires (QWR) are of great interest for their theoretically predicted advantages over the current quantum well (QW) technology. We report the application of the strain-induced lateral-layer ordering (SILO) process to a novel material system, spontaneously creating GaInAsP QWRs in situ on InP. Through molecular beam epitaxy, combinations of short-period superlattice (SPS) constituents are deposited on the growth surface

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997