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Browse Journals & Magazines > Applied Physics Letters ...> Volume:99 Issue:8 Help

Chemical structure study of SiO2/4H-SiC (0001) interface transition region by angle-dependent x-ray photoelectron spectroscopy

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5 Author(s)
Zhu, Qiaozhi ; School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China ; Huang, Lingqin ; Li, Wenbo ; Li, Shenmin
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The chemical structure of SiO2/4H-SiC (0001) interface transition region is investigated using angle-dependent x-ray photoelectron spectroscopy. The relative intensities of various silicon oxycarbides (SiOxCy) components as a function of polar emission angle suggest that SiOC3, SiO2C2, SiO3C, and SiO2 have different depth distributions at the interface. Then a nonabrupt four-layer structure model is proposed. And the relative intensities of various SiOxCy species are fitted based on the model by an electron damping scheme. The well fitted results indicate that the SiO2/4H-SiC (0001) interface transition region can be described by a chemically nonabrupt four-layer structure model well.

Published in:
Applied Physics Letters  (Volume:99 ,  Issue: 8 )

Date of Publication: Aug 2011

Page(s):
082102 - 082102-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3628322
Product Type:
Journals & Magazines
Date of Current Version :
25 August 2011
Issue Date :
Aug 2011

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