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Phase-Change Memory RESET Model Based on Detailed Cell Cooling Profile

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4 Author(s)
Kwong, K.C. ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Jin He ; Mok, P.K.T. ; Mansun Chan

A phase-change (PC) memory model that keeps track of the detailed cooling profile in the RESET process is described in this brief. By physically calculating the final crystal fraction resulting from the thermal dynamic of the PC material during the RESET process, the final resistance of the memory cell can be more accurately determined. The proposed model has been implemented in Verilog-A language and verified by experimental data.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 10 )