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A 30 Gb/s/Link 2.2 Tb/s/mm ^{2} Inductively-Coupled Injection-Locking CDR for High-Speed DRAM Interface

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3 Author(s)
Take, Y. ; Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan ; Miura, N. ; Kuroda, T.

This paper presents a 30 Gb/s/link 2.2 Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, the proposed technique doubles the operation speed and increases the data rate to 30 Gb/s/link. As a result, the data rate per layout area is increased to 2.2 Tb/s/mm2 , which is 2X that of the state-of-the-art inductive-coupling link, and 22X that of the state-of-the-art wired link.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:46 ,  Issue: 11 )