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Multivalued Logic Using a Novel Multichannel GaN MOS Structure

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2 Author(s)
Ramanan, N. ; North Carolina State Univ., Raleigh, NC, USA ; Misra, V.

Bulk-Si CMOS technology has been consistently improving for over 40 years, following Moore's law, by gate length scaling. In this letter, we present a novel charge-based multistate transistor device on the AlGaN/GaN system which uses a given gate length but handles more than two states any time. This novel multichannel MOS device, having a higher processing capability than a binary transistor, is then used to implement multiple valued logic gates in a pull-down network scheme. In this letter, we use the results of a 2-D device simulation as proof of concept and propose architectures for the implementation of some basic quaternary logic gates.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 10 )