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A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

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7 Author(s)
Jing Chen ; State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China ; Jiexin Luo ; Qingqing Wu ; Zhan Chai
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A novel SOI MOSFET structure to suppress the floating-body effect (FBE) and the short-channel effects is proposed and successfully demonstrated. In the new structure, a tunnel diode body contact is embedded in the source region, which can effectively release the accumulated body carriers. In an nMOSFET, a heavily doped p+ layer is introduced beneath the n+ source region so that the body and the source are effectively connected through tunneling. The fabricated device shows the suppressed FBE and lower DIBL. The new structure does not enlarge the device size and is fully compatible with SOI CMOS technology.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 10 )