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Two inductorless wideband low-noise amplifiers (LNAs) fabricated in a 65-nm CMOS process are presented. By using the gain-enhanced noise-canceling technique, the gain at noise-cancelling condition is increased, while the input matching is maintained. The first work is a common-source LNA with resistive shunt feedback. It achieves a maximum power gain of 10.5 dB, a bandwidth of 10 GHz, a noise figure (NF) of 2.7-3.3 dB, and an IIP3 of -3.5 dBm. The power consumption is 13.7 mW from a 1-V supply, and the area is 0.02 mm 2. The second work is a common-gate LNA. It achieves a maximum power gain of 10.7 dB, a bandwidth of 5.2 GHz, a NF of 2.9-5.4 dB, and an IIP3 of -6 dBm. The power consumption is 7 mW from a 1-V supply, and the area is 0.03 mm 2. Experimental results demonstrate that the first LNA shows the largest bandwidth, and the second LNA has the lowest power consumption among the inductorless wideband LNAs.