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Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

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4 Author(s)
Irom, F. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Nguyen, D.N. ; Harboe-Sorensen, R. ; Virtanen, A.

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Date of Conference:

14-18 Sept. 2009