By Topic

Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Irom, F. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Nguyen, D.N. ; Harboe-Sorensen, R. ; Virtanen, A.

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Date of Conference:

14-18 Sept. 2009