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Total Ionizing dose and single event effects test results of a Radiation Hardness-by-Design Library for 0.15μm fully depleted SOI-AISC

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8 Author(s)
Makihara, A. ; High-Reliability Eng. & Components Corp., Tsukuba, Japan ; Ebihara, T. ; Yokose, T. ; Tsuchiya, Y.
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This paper describes Total Ionizing Dose and Single Event Effects test results of a Radiation Hardness-By-Design Library for 0.15μm Fully Depleted CMOS/SOI-ASIC at a commercial foundry. Reasonable data was obtained to improve the library.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Date of Conference:

14-18 Sept. 2009