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A 90 nm bulk CMOS radiation hardened by design cache memory

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4 Author(s)
Xiaoyin Yao ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; Clark, L.T. ; Patterson, D.W. ; Holbert, K.E.

A RHBD high performance cache fabricated on 90 nm bulk CMOS is presented. Test silicon cache data arrays can read and write at 1.02 GHz. Irradiation to 2 Mrad(Si) negligibly impacts standby current. The cache is write-through, and relies on error checking to allow cache invalidation when single event upsets or potential single event transients are detected. The write-through cache architectural state will then naturally be reloaded by the ensuing microprocessor operations. Single cycle invalidation is supported. Single event error ion beam test results are presented, as is a description of measured single event effects in array and peripheral circuits and their mitigation by the design.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Date of Conference:

14-18 Sept. 2009