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A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling

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7 Author(s)
Roche, P. ; STMicroelectronics, Central CAD & Design Solutions, Crolles, France ; Gasiot, G. ; Uznanski, S. ; Daveau, J.-M.
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This paper presents new experimental and modeling evidences that advanced commercial CMOS technologies get intrinsically harder against space radiations with technology downscaling. When further using innovative rad-hard design techniques, electrical performances and radiation-hardness can be both met in a commercial CMOS 65 nm.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Date of Conference:

14-18 Sept. 2009