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“Effective NIEL” in silicon: Calculation using molecular dynamic simulation results

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4 Author(s)
C. Inguimbert ; ONERA-DESP, 2 avenue E. Belin, 31055 Toulouse, France ; P. Arnolda ; T. Nuns ; G. Rolland

Molecular dynamic studies demonstrate that, under suitable conditions, low energy transfer below the atomic displacement threshold (Td) can increase damage production. In the case of silicon material, both these non linear subthreshold phenomena and recombination effects have been incorporated in a new model. In comparison with Kinchin Pease approach, our improved model, is able to estimate more accurately the number of displacements generated by a primary knock on atom. It is then used to calculate “effective NIEL”.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Date of Conference:

14-18 Sept. 2009