Referenced Items are not available for this document.
TCAD simulations of a 90nm CMOS bulk technology have been performed to investigate how technologies parameters impact on collection charge leading to Single Event Effects. This work proposes an updated advanced collection model.
Published in:
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Date of Conference: 14-18 Sept. 2009
- Page(s):
- 187 - 193
- ISSN :
- 0379-6566
- E-ISBN :
- 978-1-4577-0493-2
- Print ISBN:
- 978-1-4577-0492-5
- INSPEC Accession Number:
- 12193326
- Conference Location :
- Bruges
- Digital Object Identifier :
- 10.1109/RADECS.2009.5994578
- Product Type:
- Conference Publications
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