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Collected charge analysis for a new advanced transient model by TCAD simulation in 90nm technology

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5 Author(s)

TCAD simulations of a 90nm CMOS bulk technology have been performed to investigate how technologies parameters impact on collection charge leading to Single Event Effects. This work proposes an updated advanced collection model.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Date of Conference:

14-18 Sept. 2009