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High mobility strained p-channel germanium quantum well field effect transistor for low power (Vcc = 0.5 V) III–V CMOS applications

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1 Author(s)
Pillarisetty, R. ; Components Res., Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA

In this talk, we review recent research results (Pillarisetty et al., 2010) investigating the germanium quantum well field effect transistor (QWFET) for use as the p-channel device option for future low power (Vcc = 0.5V) III-V CMOS architecture. We demonstrate a high mobility Ge p-channel QWFET, with scaled TOXE = 14.5Å and mobility of 770 cm2/V*s at ns =5×1012 cm-2. For TOXE <; 40 Å, this represents the highest hole mobility reported for any Ge device and is 4x higher than state-of-the-art strained silicon (Packan et al., 2008). Furthermore, at Vcc = 0.5V, the Ge QWFET exhibits 2x higher drive current at fixed Ioff than the best III-V (Radosavljevic et al., 2008) and germanium devices (Mitard et al., 2008) reported to date. These results suggest the Ge QWFET is a viable p-channel option for non-silicon CMOS.

Published in:

Device Research Conference (DRC), 2011 69th Annual

Date of Conference:

20-22 June 2011