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Lateral gate suspended-body carbon nanotube field-effect-transistors with sub-100nm air gap by precise positioning method

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2 Author(s)
Ji Cao ; Nanoelectronic Devices Laboratory (Nanolab), Ecole Polytechnique Fédérale de Lausanne, CH-1015, Switzerland ; Adrian M. Ionescu

We report, for the first time, a self-aligned lateral gate suspended-body CNTFET with sub-lOOnm air gap fabricated by an improved precise positioning method.. The superior I-V characteristics of the lateral gate CNT FET are experimentally studied. The proposed suspended-body CNTFETs hold promise for bottom-up fabrication of resonant NEMS devices for sensing and RF applications.

Published in:

Device Research Conference (DRC), 2011 69th Annual

Date of Conference:

20-22 June 2011