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Fermi-level pinning at metal/antimonides interface and demonstration of antimonides-based metal S/D Schottky pMOSFETs

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7 Author(s)
Yuan, Z. ; Dept. Of Elec. Eng., Stanford Univ., Stanford, CA, USA ; Nainani, A. ; Lin, J. ; Bennett, B.R.
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In this paper, we study the metal contact to antimonides compound. Good metal contact formed on p-type material and current suppression on n-type samples is attributed to the Fermi-level pinning at metal/antimonide interface and charge-neutral level being near the valence band edge. Schottky-barrier S/D p-MOSFETs is proposed and experimentally demonstrated which combines an InxGa1-xSb channel for good hole transport with metal S/D for low access resistance.

Published in:

Device Research Conference (DRC), 2011 69th Annual

Date of Conference:

20-22 June 2011