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Sub-10 nm epitaxial graphene nanoribbon FETs

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10 Author(s)
Tahy, K. ; Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA ; Hwang, W.S. ; Tedesco, J.L. ; Myers-Ward, R.L.
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In this work, we report lithographically patterned GNRs on epitaxial graphene on SiC substrates. Specifically, we show the first top-gated GNR field-effect transistors (FETs) on epi-graphene substrates that exhibit the opening of a substantial energy bandgap (exceeding -0.15 eV at a ribbon width of 10 nm), respectable carrier mobility (700 800 cm2/Vs), high current modulation (10:1 at 300 K), and high current carrying capacity (0.3 mA/μm at VDS = 1 V) at the same time. Both single GNR and GNR array devices are reported.

Published in:

Device Research Conference (DRC), 2011 69th Annual

Date of Conference:

20-22 June 2011