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Comparison of dynamic fluctuation in drain current with static variability using N-MOSFETs with poly-Si/SiO2 gate stack structures

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5 Author(s)
K. Ohmori ; Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Ibaraki 305-8573, Japan ; R. Hettiarachchi ; W. Feng ; T. Matsuki
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We have revealed that the dynamic fluctuation in time, i.e., noise, of drain current (Id) is closely related to the static variability. The current conduction mechanism such as diffusion and drift transports is a key to consistently understand the magnitude of not only the noise from a single transistor but also the static variability obtained from a number of transistors. The magnitude of fluctuation in the diffusion regime is larger than that in the drift regime, where the large number of carriers reduces the fluctuation.

Published in:

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Date of Conference:

12-16 June 2011