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Noise and Terahertz rectification in semiconductor diodes and transistors

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3 Author(s)
Mateos, J. ; Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain ; Iniguez-de-la-Torre, I. ; Gonzalez, T.

In this work we explore high frequency collective phenomena present in classic HEMTs and in asymmetric nanodiodes, so called self-switching diodes (SSDs), that leads to a peak in the current noise spectrum which enhances the DC response of the devices, thus originating a THz resonance in the rectification of AC signals. These mechanisms have been evidenced in recent experiments made with HEMTs, in which THz detection as a result of plasma wave resonances has been demonstrated. In this paper, the noise spectra of the devices have been obtained by means of Monte Carlo simulations self-consistently coupled to a Poisson solver, able to provide not only static results but also the effect of collective phenomena such as plasma oscillations.

Published in:

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Date of Conference:

12-16 June 2011