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This paper presents the flicker noise or 1/f-noise measurement of RF sputtered amorphous silicon temperature sensors. The temperature sensor was fabricated between a polyimide substrate and superstrate to place it on a zero stress plane. The effects of flicker noise and voltage dependence of noise voltage power spectral density of the sensor were evaluated. The average value of flicker noise coefficient or normalized Hooge parameter K1/f was found to be 1.2×10-11.