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The flicker noise in amorphous silicon based temperature sensors in flexible substrates

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3 Author(s)
Ahmed, M. ; Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA ; Butler, D.P. ; Celik-Butler, Z.

This paper presents the flicker noise or 1/f-noise measurement of RF sputtered amorphous silicon temperature sensors. The temperature sensor was fabricated between a polyimide substrate and superstrate to place it on a zero stress plane. The effects of flicker noise and voltage dependence of noise voltage power spectral density of the sensor were evaluated. The average value of flicker noise coefficient or normalized Hooge parameter K1/f was found to be 1.2×10-11.

Published in:
Noise and Fluctuations (ICNF), 2011 21st International Conference on

Date of Conference: 12-16 June 2011

Page(s):
154 - 157
Print ISBN:
978-1-4577-0189-4
INSPEC Accession Number:
12193183
Conference Location :
Toronto, ON
Digital Object Identifier :
10.1109/ICNF.2011.5994287
Product Type:
Conference Publications

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