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Modeling and simulation of noise in transistors under large-signal condition

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4 Author(s)
Fabrizio Bonani ; Dipartimento di Elettronica, Politecnico di Torino, Italy ; Simona Donati Guerrieri ; Giovanni Ghione ; Riccardo Tisseur

The paper reviews the current status of noise simulation and modeling for semiconductor devices (in particular, transistors) operated in large-signal (forced) conditions. From a practical standpoint, large-signal noise modeling is relevant in the simulation and design of analog components such as mixers and frequency multipliers. The specific features of cyclostationary noise are discussed, and the various modeling techniques are presented, including simulation strategies for evaluating the large-signal steady state within the framework of a physics-based model. Particular attention is given to the issue of microscopic noise scource modulation and frequency conversion, still an open problem in the case of 1/f noise not amenable to a superposition of more elementary (e.g. generation-recombination) sources. Starting from physics-based large-signal simulation techniques, the review also covers compact modeling strategies, where noise source modulation is even more involved and no general, device-independent strategy seems to provide correct results, but ad-hoc solutions have to be tailored on specific device classes.

Published in:

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Date of Conference:

12-16 June 2011