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Carbon nanotube thin film transistors on flexible substrates

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5 Author(s)
Chandra, Bhupesh ; IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA ; Park, Hongsik ; Maarouf, Ahmed ; Martyna, Glenn J.
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Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼105) with mobility values ranging from 10-35 cm2/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 7 )

Date of Publication:

Aug 2011

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