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SOI TFET I_{\rm ON}/I_{\rm OFF} Enhancement via Back Biasing

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3 Author(s)
Alex Guo ; Univ. of California, Berkeley, CA, USA ; Peter Matheu ; Tsu-Jae King Liu

The effect of back biasing on the performance of a planar tunnel field-effect transistor (TFET) implemented on a silicon-on-insulator substrate is investigated. It is found that reverse back biasing reduces the subthreshold swing SS and increases the range of drain current over which SS is less than (kBT/q)ln(10); hence, it is effective for improving the TFET on/off current ratio for low operating voltages (≤ 0.5 V).

Published in:

IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 10 )