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Widely Tunable High-Power Tapered Diode Laser at 1060 nm

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4 Author(s)
Ole Bjarlin Jensen ; DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Roskilde, Denmark ; Bernd Sumpf ; Götz Erbert ; Paul Michael Petersen

We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range.

Published in:

IEEE Photonics Technology Letters  (Volume:23 ,  Issue: 21 )