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High-Performance \hbox {Ni}/\hbox {Lu}_{2}\hbox {O}_{3}/ \hbox {TaN} Metal–Insulator–Metal Capacitors

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2 Author(s)
Somnath Mondal ; Department of Electronic Engineering, Chang Gung University, Gueishan , Taiwan ; Tung-Ming Pan

We fabricate the Ni/Lu2O3/TaN metal-insulator-metal capacitor with a high capacitance density of 7.5 fF/μm2, a relatively small quadratic voltage coefficient of capacitance (VCC) of 75 ppm/V2, a low leakage current of 5 × 10-8 A/cm2 at -1 V, and an excellent ten-year reliability with a very low ΔC/C of 0.51% at 3 V. These small VCC value and good reliability are attributed to a reduction of carrier injection and trapping into the dielectric.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 11 )