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Nanoscale thermally induced strain and stress analysis by complementary Scanning Thermal Microscopy Techniques

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4 Author(s)
Fakhri, M. ; Dept. of Electron., Univ. of Wuppertal, Wuppertal, Germany ; Geinzer, A.-K. ; Heiderhoff, R. ; Balk, L.J.

Miniaturization of integrated circuits is coupled with increased power dissipation and associated thermal and thermomechanical effects which lead to device malfunction. Within this work a measurement technique is introduced that allows thermally induced strain and stress analysis of electronic devices with nanometre spatial resolution and highest sensitivity by Finite Element analysis assisted complementary Scanning Near-field Thermal Microscopy (SThM) and Scanning Joule Expansion Microscopy (SJEM). As an illustration, an interconnect constriction is investigated.

Published in:

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Date of Conference:

4-7 July 2011

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